Invention Grant
- Patent Title: Thin film transistor and thin film transistor substrate including the same
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Application No.: US14989923Application Date: 2016-01-07
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Publication No.: US09799740B2Publication Date: 2017-10-24
- Inventor: Junhyun Park , Sunghwan Kim , Seyoung Song , Kyoungju Shin
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Cantor Colburn LLP
- Priority: KR10-2015-0090492 20150625
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/417 ; H01L27/12 ; H01L29/786 ; H01L29/10

Abstract:
A thin film transistor substrate includes: a substrate; and a thin film transistor including a gate electrode on the substrate, an active layer on the gate electrode, and a source electrode and a drain electrode on the active layer. Within the thin film transistor, at least one of the source electrode and the drain electrode defines a plurality of branch electrodes thereof and a main electrode to which the plurality of branch electrodes is commonly connected. Each of the plurality of branch electrodes overlaps the gate electrode.
Public/Granted literature
- US20160380064A1 THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR SUBSTRATE INCLUDING THE SAME Public/Granted day:2016-12-29
Information query
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