- Patent Title: Preventing leakage inside air-gap spacer during contact formation
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Application No.: US15278925Application Date: 2016-09-28
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Publication No.: US09799746B2Publication Date: 2017-10-24
- Inventor: Kangguo Cheng , Ruilong Xie , Tenko Yamashita
- Applicant: International Business Machines Corporation , GLOBALFOUNDRIES Inc.
- Applicant Address: US NY Armonk KY Grand Cayman
- Assignee: International Business Machines Corporation,GlobalFoundries Inc.
- Current Assignee: International Business Machines Corporation,GlobalFoundries Inc.
- Current Assignee Address: US NY Armonk KY Grand Cayman
- Agency: Ryan, Mason & Lewis, LLP
- Agent Vazken Alexanian
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/49 ; H01L21/768 ; H01L29/66
Abstract:
Techniques for preventing leakage of contact material into air-gap spacers during contact formation. For example, a method comprises forming a contact trench on a semiconductor structure over an air-gap spacer and depositing a liner in the contact trench. The liner deposition material fills a portion of the air-gap spacer pinching off the contact trench to the air-gap spacer.
Public/Granted literature
- US20170077258A1 PREVENTING LEAKAGE INSIDE AIR-GAP SPACER DURING CONTACT FORMATION Public/Granted day:2017-03-16
Information query
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