Invention Grant
- Patent Title: Process kit of physical vapor deposition chamber and fabricating method thereof
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Application No.: US14080561Application Date: 2013-11-14
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Publication No.: US09803274B2Publication Date: 2017-10-31
- Inventor: Shih-Wei Bih , Wei-Jen Chen , Yen-Yu Chen , Hsien-Chieh Hsiao , Chang-Sheng Lee , Wei-Chen Liao , Wei Zhang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: C23C14/35
- IPC: C23C14/35 ; C23C14/34 ; H01J37/34 ; H01J37/32 ; C23C14/56

Abstract:
A physical vapor deposition (PVD) chamber, a process kit of a PVD chamber and a method of fabricating a process kit of a PVD chamber are provided. In various embodiments, the PVD chamber includes a sputtering target, a power supply, a process kit, and a substrate support. The sputtering target has a sputtering surface that is in contact with a process region. The power supply is electrically connected to the sputtering target. The process kit has an inner surface at least partially enclosing the process region, and a liner layer disposed on the inner surface. The substrate support has a substrate receiving surface, wherein the liner layer disposed on the inner surface of the process kit has a surface roughness (Rz), and the surface roughness (Rz) is substantially in a range of 50-200 μm.
Public/Granted literature
- US20150129414A1 PROCESS KIT OF PHYSICAL VAPOR DEPOSITION CHAMBER AND FABRICATING METHOD THEREOF Public/Granted day:2015-05-14
Information query
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