The present disclosure relates to semiconductor structures and, more particularly, to skip via structures and methods of manufacture. The structure includes: a first wiring layer with one or more wiring structures; an upper wiring layer with one or more wiring structures, located above the first wiring layer; a blocking material which contacts at least one of the wiring structures of the upper wiring layer; a skip via with metallization, the skip via passes through the upper wiring layer and makes contact with the one or more wiring structures of the first wiring layer; and a conductive material in the skip via above the metallization and in a via interconnect above the blocking material.