Invention Grant
- Patent Title: Manufacturing method of thin film transistor, manufacturing method of array substrate and array substrate
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Application No.: US14430019Application Date: 2014-05-29
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Publication No.: US09806108B2Publication Date: 2017-10-31
- Inventor: Seongyeol Yoo , Seungjin Choi , Heecheol Kim , Youngsuk Song
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE Technology Group Co., Ltd.
- Current Assignee: BOE Technology Group Co., Ltd.
- Current Assignee Address: CN Beijing
- Agency: Banner & Witcoff, Ltd.
- Priority: CN201310740724 20131227
- International Application: PCT/CN2014/078858 WO 20140529
- International Announcement: WO2015/096394 WO 20150702
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/12 ; H01L29/66 ; G02F1/1362 ; G02F1/1368 ; H01L29/24

Abstract:
A manufacturing method of a thin film transistor, a manufacturing method of an array substrate and an array substrate are provided. The manufacturing method of the thin film transistor comprises: forming an active layer, a source electrode and a drain electrode on a substrate by one patterning process, the active layer, the source electrode and the drain electrode being located in a same layer. The manufacturing method of the thin film transistor can effectively reduce the number of patterning processes, so as to enhance the capacity in mass production, and reduce the cost.
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