Invention Grant
- Patent Title: Semiconductor devices
-
Application No.: US14536250Application Date: 2014-11-07
-
Publication No.: US09806204B2Publication Date: 2017-10-31
- Inventor: Sung-Soo Ahn , O Ik Kwon , Bum-Soo Kim , Hyun-Sung Kim , Kyoung-Sub Shin , Min-Kyung Yun , Seung-Pil Chung , Won-Bong Jung
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2011-0126460 20111130
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/788 ; H01L21/768 ; H01L27/11521 ; H01L29/423
Abstract:
A method of manufacturing a semiconductor device, the method including forming a tunnel insulating layer on an upper surface of a substrate, forming gate patterns on an upper surface of the tunnel insulating layer, forming capping layer patterns on sidewalls of the gate patterns and on the upper surface of the tunnel insulating layer, etching a portion of the tunnel insulating layer that is not covered with the gate patterns or the capping layer patterns to form a tunnel insulating layer pattern, and forming a first insulating layer on the upper surface of the substrate to cover the gate patterns, the capping layer patterns, and the tunnel insulating layer pattern, wherein the first insulating layer has an air gap between the capping layer patterns.
Public/Granted literature
- US20150054054A1 SEMICONDUCTOR DEVICES Public/Granted day:2015-02-26
Information query
IPC分类:
