Invention Grant
- Patent Title: Storage device with composite spacer and method for manufacturing the same
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Application No.: US14740101Application Date: 2015-06-15
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Publication No.: US09806254B2Publication Date: 2017-10-31
- Inventor: Fu-Ting Sung , Chern-Yow Hsu , Shih-Chang Liu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L45/00 ; H01L43/12
Abstract:
A storage device includes a first electrode, a second electrode, a storage element, a spacer and a barrier structure. The second electrode is opposite to the first electrode. The storage element is disposed between the first electrode and the second electrode. The spacer is formed on a sidewall of the second electrode, and the spacer has a notch positioned on a top surface of the spacer. The barrier structure is embedded in a lateral of the spacer, and the barrier structure has a top extending upwards past a bottom of the notch. In addition, a method of manufacturing the storage device is disclosed as well.
Public/Granted literature
- US20160365513A1 STORAGE DEVICE WITH COMPOSITE SPACER AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2016-12-15
Information query
IPC分类:
