Invention Grant
- Patent Title: Substrate comprising embedded elongated capacitor
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Application No.: US14579651Application Date: 2014-12-22
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Publication No.: US09807884B2Publication Date: 2017-10-31
- Inventor: Kyu-Pyung Hwang , Young Kyu Song
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Loza & Loza, LLP/Qualcomm
- Main IPC: H05K1/18
- IPC: H05K1/18 ; H05K1/11 ; H05K1/02 ; H05K3/46 ; H05K3/30 ; H05K3/40 ; H01G4/248 ; H01G4/012 ; H01G4/005 ; H01G4/232 ; H01L23/538 ; H01L23/50 ; H01G4/30 ; H01L23/00 ; H01L25/065

Abstract:
A substrate that includes a first dielectric layer and a capacitor embedded in the first dielectric layer. The capacitor includes a first terminal, a second terminal, and a third terminal. The second terminal is laterally located between the first terminal and the third terminal. The capacitor also includes a second dielectric layer, a first metal layer and a second metal layer. The first metal layer is coupled to the first and third terminals. The first metal layer, the first terminal, and the third terminal are configured to provide a first electrical path for a first signal. The second metal layer is coupled to the second terminal. The second metal layer and the second terminal are configured to provide a second electrical path for a second signal.
Public/Granted literature
- US20160183378A1 SUBSTRATE COMPRISING EMBEDDED ELONGATED CAPACITOR Public/Granted day:2016-06-23
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