- 专利标题: Systems and methods for high-throughput and small-footprint scanning exposure for lithography
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申请号: US15370174申请日: 2016-12-06
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公开(公告)号: US09810994B2公开(公告)日: 2017-11-07
- 发明人: Burn Jeng Lin , Shy-Jay Lin , Jaw-Jung Shin , Wen-Chuan Wang
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Haynes and Boone, LLP
- 主分类号: G03B27/32
- IPC分类号: G03B27/32 ; G03B27/44 ; G03B27/54 ; H02K41/02 ; G03F7/20 ; H01L21/68
摘要:
The present disclosure provides a lithography system comprising a radiation source and an exposure tool including a plurality of exposure columns densely packed in a first direction. Each exposure column includes an exposure area configured to pass the radiation source. The system also includes a wafer carrier configured to secure and move one or more wafers along a second direction that is perpendicular to the first direction, so that the one or more wafers are exposed by the exposure tool to form patterns along the second direction. The one or more wafers are covered with resist layer and aligned in the second direction on the wafer carrier.
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