Invention Grant
- Patent Title: Measuring method of low off-state current of transistor
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Application No.: US14625984Application Date: 2015-02-19
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Publication No.: US09817040B2Publication Date: 2017-11-14
- Inventor: Masashi Tsubuku , Kazuma Furutani , Atsushi Hirose , Toshihiko Takeuchi
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2014-031785 20140221; JP2014-050310 20140313; JP2014-065766 20140327
- Main IPC: G01R31/26
- IPC: G01R31/26 ; G01R19/00

Abstract:
A minute current measurement method is provided. In the current measurement method, a first potential is applied to a first terminal of a transistor under test, a second potential is applied to a first terminal of a first transistor, the first transistor is turned on to accumulate a predetermined charge in a node electrically connecting a second terminal of the transistor under test with a second terminal of the first transistor, a third potential of an output terminal of a read circuit electrically connected to the node is measured, the first transistor is turned off, a fourth potential of the output terminal of the read circuit electrically connected to the node is measured, the amount of the charge held by the node is estimated from the amount of change in the potential of the output terminal of the read circuit (e.g., a difference between the third potential and the fourth potential), and a value of current flowing between the first terminal of the transistor under test and the second terminal of the first transistor is calculated from the amount of the charge held by the node.
Public/Granted literature
- US20150241510A1 CURRENT MEASUREMENT METHOD Public/Granted day:2015-08-27
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