- Patent Title: Contacts for semiconductor devices and methods of forming thereof
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Application No.: US15383731Application Date: 2016-12-19
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Publication No.: US09824972B2Publication Date: 2017-11-21
- Inventor: Mark James Harrison , Martin Sporn
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/532 ; H01L23/522 ; H01L21/768 ; H01L21/3065 ; H01L21/285
Abstract:
A method for a method of forming a semiconductor device includes providing a semiconductor substrate having a bottom surface opposite a top surface with circuitry disposed at the top surface. The method further includes forming a first metal layer having a first metal over the bottom surface of the semiconductor substrate. The first metal layer is formed by depositing an adhesion promoter followed by depositing the first metal.
Public/Granted literature
- US20170098614A1 Contacts for Semiconductor Devices and Methods of Forming Thereof Public/Granted day:2017-04-06
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