The present teachings relate to an organic electroluminescent transistor with improved light-emission characteristics. More specifically, the present organic electroluminescent transistor has an emissive ambipolar channel including at least one layer of an n-type semiconductor material, at least one layer of a p-type semiconductor material, and at least one layer of an emissive material arranged between the layers of the p-type and n-type semiconductor materials, with the n-type semiconductor material comprising an electron-transporting compound represented by formula (N-1): where X, Ar, Ar′, R1, R2, m and m′ are as defined herein.