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    Electroluminescent organic double gate transistor
    7.
    发明授权
    Electroluminescent organic double gate transistor 有权
    电致发光有机双栅晶体管

    公开(公告)号：US09343707B2

    公开(公告)日：2016-05-17

    申请号：US14827116

    申请日：2015-08-14

    Applicant: E.T.C. S.R.L.

    Inventor： Michele Muccini ,  Raffaella Capelli

    IPC: H01L51/52 ,  H01L51/05

    CPC classification number: H01L51/5296 ,  H01L51/0554 ,  H01L51/0562

    Abstract: An organic electroluminescent transistor is described. The organic electroluminescent transistor has a first and a second dielectric layer, a first and a second control electrode and an assembly having a source electrode, a drain electrode and an ambipolar channel. The ambipolar channel has a first layer of semiconductor material, a second layer of semiconductor material and a layer of emissive material arranged between the first layer of semiconductor material and the second layer of semiconductor material. The source electrode and the drain electrode are both in contact with only one of the two layers of semiconductor material.

    Abstract translation: 描述有机电致发光晶体管。 有机电致发光晶体管具有第一和第二介电层，第一和第二控制电极以及具有源电极，漏电极和双极通道的组件。 双极通道具有第一半导体材料层，第二层半导体材料和布置在第一半导体材料层和第二半导体材料层之间的发射材料层。 源电极和漏电极仅与两层半导体材料中的仅一个接触。

    ORGANIC LIGHT EMITTING AMBIPOLAR FIELD EFFECT TRANSISTOR WITH DISTRIBUTED LIGHT EMISSION
    8.
    发明申请
    ORGANIC LIGHT EMITTING AMBIPOLAR FIELD EFFECT TRANSISTOR WITH DISTRIBUTED LIGHT EMISSION 有权
    具有分布式发光的有机发光环形场效应晶体管

    公开(公告)号：US20150001518A1

    公开(公告)日：2015-01-01

    申请号：US14373225

    申请日：2013-02-21

    Applicant: E.T.C. S.R.L.

    Inventor： Raffaella Capelli ,  Gianluca Generali ,  Michele Muccini ,  Stefano Toffanin

    IPC: H01L51/52 ,  H01L51/50

    CPC classification number: H01L51/5296 ,  H01L51/0025 ,  H01L51/0068 ,  H01L51/0081 ,  H01L51/0087 ,  H01L51/5004 ,  H01L51/5024 ,  H01L2251/552

    Abstract: An organic ambipolar light emitting field effect transistor having an architecture with layers stacked one over the other, adapted to generate a diffused illumination is described. The transistor has a gate electrode, a dielectric layer superposed to the gate electrode, an ambipolar channel superposed to the dielectric layer having a P-type semiconductor layer whose energy band is determined by its highest occupied molecular orbital HOMO-SCp and lowest unoccupied molecular orbital LUMO-SCp, a N-type semiconductor layer whose energy band is determined by its highest occupied molecular orbital HOMO-SCn and lowest unoccupied molecular orbital LUMO-SCn and a light emitting layer adapted to allow recombination of charge carriers of opposite sign, interposed between the P-type semiconductor layer and the N-type semiconductor layer, whose energy band is determined by its highest occupied molecular orbital HOMO-R and lowest unoccupied molecular orbital LUMO-R, respectively; a source electrode adapted to inject charges of a first type and a drain electrode adapted to inject charges of a second type, said source electrode and drain electrode being in contract with a same layer of said P-type or N-type semiconductor layers, the other of said semiconductor layers being in contact with the dielectric layer.

    Abstract translation: 描述了一种有机双极发光场效应晶体管，其具有层叠在另一层上的层的结构，适用于产生漫射照明。 晶体管具有栅极电极，与栅电极叠置的电介质层，叠加到具有P型半导体层的电介质层的双极通道，其能带由其最高占据分子轨道HOMO-SCp和最低未占据分子轨道确定 LUMO-SCp是其能带由其最高占据分子轨道HOMO-SCn和最低未占据分子轨道LUMO-SCn确定的N型半导体层，以及适于允许相反符号的电荷载流子复合的发光层，介于 P型半导体层和N型半导体层，其能带分别由其最高占据分子轨道HOMO-R和最低未占分子轨道LUMO-R确定; 源电极，其适于注入适于注入第二类电荷的第一类型和漏电极的电荷，所述源电极和漏电极与所述P型或N型半导体层的相同层收缩， 所述半导体层中的另一个与介电层接触。

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