Invention Grant
- Patent Title: Semiconductor device comprising a plurality of N-channel transistors wherein the oxide semiconductor layer comprises a portion being in an oxygen-excess state
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Application No.: US15246853Application Date: 2016-08-25
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Publication No.: US09837442B2Publication Date: 2017-12-05
- Inventor: Shunpei Yamazaki , Junichiro Sakata , Masayuki Sakakura , Yoshiaki Oikawa , Kenichi Okazaki , Hotaka Maruyama , Masashi Tsubuku
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2009-185317 20090807; JP2009-206489 20090907
- Main IPC: G02F1/136
- IPC: G02F1/136 ; H01L27/12 ; H01L29/786 ; G02F1/133 ; G02F1/1345 ; G02F1/1368 ; G11C19/28 ; H01L29/24 ; G02F1/1333 ; G02F1/1335 ; G02F1/1337 ; G02F1/1339 ; G02F1/1343 ; G02F1/1362

Abstract:
An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is sandwiched between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected to each other in an opening provided in a gate insulating film through an oxide conductive layer.
Public/Granted literature
- US20160365460A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2016-12-15
Information query
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