Resistive memory array using P-I-N diode select device and methods of fabrication thereof
摘要:
An example system includes a processing circuit coupled to a memory system and an interface coupled between the processing circuit and a device. The memory system includes a resistive memory array comprising multiple memory structures. Each memory structure comprises a resistive memory cell and is associated with a P-I-N diode. The processing circuit is to access the resistive memory array responsive to a signal received from the device via the interface.
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