- 专利标题: Resistive memory array using P-I-N diode select device and methods of fabrication thereof
-
申请号: US15197099申请日: 2016-06-29
-
公开(公告)号: US09837469B1公开(公告)日: 2017-12-05
- 发明人: Seungmoo Choi , Sameer S. Haddad
- 申请人: Cypress Semiconductor Corporation
- 申请人地址: US CA San Jose
- 专利权人: Cypress Semiconductor Corporation
- 当前专利权人: Cypress Semiconductor Corporation
- 当前专利权人地址: US CA San Jose
- 主分类号: H01L29/06
- IPC分类号: H01L29/06 ; H01L27/24 ; H01L45/00 ; G11C13/00
摘要:
An example system includes a processing circuit coupled to a memory system and an interface coupled between the processing circuit and a device. The memory system includes a resistive memory array comprising multiple memory structures. Each memory structure comprises a resistive memory cell and is associated with a P-I-N diode. The processing circuit is to access the resistive memory array responsive to a signal received from the device via the interface.
信息查询
IPC分类: