- 专利标题： Semiconductor device wtih an interconnecting semiconductor electrode between first and second semiconductor electrodes and method of manufacture therefor
-
申请号： US14707150申请日： 2015-05-08
-
公开(公告)号： US09837526B2公开(公告)日： 2017-12-05
- 发明人: Philippe Dupuy , Hubert Grandry
- 申请人： Philippe Dupuy , Hubert Grandry
- 申请人地址： US TX Austin
- 专利权人： NXP USA, Inc.
- 当前专利权人： NXP USA, Inc.
- 当前专利权人地址： US TX Austin
- 代理商 Charlene R. Jacobsen
- 优先权： WOPCT/IB2014/002946 20141208
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/66 ; H01L27/07 ; H01L21/8234 ; H01L29/423 ; H01L27/088
摘要：
A semiconductor product comprising: a first semiconductor electrode, a second semiconductor electrode and an interconnecting semiconductor electrode defining a third semiconductor electrode; a first switch, between the first semiconductor electrode and the third semiconductor electrode, provided by a first vertical insulated-gate field-effect-transistor; and a second switch, between the second semiconductor electrode and the third semiconductor electrode, provided by a second vertical insulated-gate field-effect-transistor, wherein the interconnecting semiconductor electrode interconnects the first vertical insulated gate field-effect-transistor and the second vertical insulated gate field-effect-transistor.
公开/授权文献
- US20160163849A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREFOR 公开/授权日：2016-06-09
信息查询
IPC分类:
