- 专利标题: Standby voltage condition for fast RF amplifier bias recovery
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申请号: US15268297申请日: 2016-09-16
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公开(公告)号: US09837965B1公开(公告)日: 2017-12-05
- 发明人: Poojan Wagh , Kashish Pal
- 申请人: Peregrine Semiconductor Corporation
- 申请人地址: US CA San Diego
- 专利权人: Peregrine Semiconductor Corporation
- 当前专利权人: Peregrine Semiconductor Corporation
- 当前专利权人地址: US CA San Diego
- 代理机构: Jaquez Land Greenhaus LLP
- 代理商 Martin J. Jaquez, Esq.; Alessandro Steinfl, Esq.
- 主分类号: H03F1/02
- IPC分类号: H03F1/02 ; H03F1/56 ; H03F3/193
摘要:
Various methods and circuital arrangements for biasing one or more gates of stacked transistors of an amplifier are possible where the amplifier is configured to operate in at least an active mode and a standby mode. Circuital arrangements can reduce bias circuit standby current during operation in the standby mode while allowing a quick recovery to normal operating conditions of the amplifier. Biasing an input transistor of the stacked transistors can be obtained by using a replica stack circuit.
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