Invention Grant
- Patent Title: IGBT gate drive during turnoff to reduce switching loss
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Application No.: US15132490Application Date: 2016-04-19
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Publication No.: US09838002B2Publication Date: 2017-12-05
- Inventor: Zhuxian Xu , Chingchi Chen , Xi Lu , Ke Zou
- Applicant: Ford Global Technologies, LLC
- Applicant Address: US MI Dearborn
- Assignee: Ford Global Technologies, LLC
- Current Assignee: Ford Global Technologies, LLC
- Current Assignee Address: US MI Dearborn
- Agency: Brooks Kushman P.C.
- Agent David B. Kelley
- Main IPC: H03K17/284
- IPC: H03K17/284 ; H02M3/158 ; H03K17/10 ; B60L11/18

Abstract:
A vehicle powertrain includes an IGBT and a gate driver. The IGBT is configured to energize an electric machine. The gate driver is configured to apply an off voltage less than a threshold voltage onto a gate of the IGBT while the IGBT is operating in a saturation mode, and in response to expiration of a delay from a transition from saturation to linear mode, apply a voltage pulse above the off voltage to reduce flyback from the electric machine. The gate driver may be configured to, in response to expiration of a delay from a transition from saturation to linear mode, apply a voltage pulse above the off voltage and below the threshold to reduce flyback from the electric machine.
Public/Granted literature
- US20170302263A1 IGBT Gate Drive During Turnoff To Reduce Switching Loss Public/Granted day:2017-10-19
Information query
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