- 专利标题： Method of manufacturing low temperature polycrystalline silicon thin film and thin film transistor, thin film transistor, display panel and display device
-
申请号： US14908678申请日： 2015-07-16
-
公开(公告)号： US09842735B2公开(公告)日： 2017-12-12
- 发明人: Yanan Niu , Chao Liu , Zengsheng He , Lei Chen , Yujun Zhang
- 申请人： BOE TECHNOLOGY GROUP CO., LTD.
- 申请人地址： CN Beijing
- 专利权人： BOE Technology Group Co., Ltd.
- 当前专利权人： BOE Technology Group Co., Ltd.
- 当前专利权人地址： CN Beijing
- 代理机构： Collard & Roe, P.C.
- 优先权： CN201510095020 20150303
- 国际申请： PCT/CN2015/084172 WO 20150716
- 国际公布： WO2016/138715 WO 20160909
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/84 ; H01L21/02 ; H01L29/78 ; H01L29/786 ; H01L21/308 ; H01L27/12 ; H01L29/66
摘要：
A method of manufacturing a low temperature polycrystalline silicon thin film and a thin film transistor, a thin film transistor, a display panel and a display device are provided. The method includes: forming an amorphous silicon thin film (01) on a substrate (1); forming a pattern of a silicon oxide thin film (02) covering the amorphous silicon thin film (01), a thickness of the silicon oxide thin film (02) located at a preset region being larger than that of the silicon oxide thin film (02) located at other regions; and irradiating the silicon oxide thin film (02) by using excimer laser to allow the amorphous silicon thin film (01) forming an initial polycrystalline silicon thin film (04), the initial polycrystalline silicon thin film (04) located at the preset region being a target low temperature polycrystalline silicon thin film (05). The polycrystalline silicon thin film has more uniform crystal size.
公开/授权文献
信息查询
IPC分类:
