Invention Grant
- Patent Title: Semiconductor device and fabrication method thereof and semiconductor structure
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Application No.: US14272764Application Date: 2014-05-08
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Publication No.: US09842771B2Publication Date: 2017-12-12
- Inventor: Chang-Fu Lin , Chin-Tsai Yao , Hung-Ming Chang , Ming-Chin Chuang , Fu-Tang Huang
- Applicant: Siliconware Precision Industries Co., Ltd.
- Applicant Address: TW Taichung
- Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee Address: TW Taichung
- Agency: Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
- Agent Peter F. Corless; Steven M. Jensen
- Priority: TW102132162A 20130906
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/768 ; H01L23/00 ; H01L23/31 ; H01L21/56
Abstract:
A semiconductor device is disclosed, which includes: a substrate having a plurality of connecting pads; a semiconductor component having a plurality of bonding pads formed on a surface thereof and corresponding to the connecting pads and a UBM layer formed on the bonding pads; a plurality of conductive elements each having a first conductive portion and a second conductive portion sequentially formed on the UBM layer, wherein the second conductive portion is less in width than the first conductive portion; and a plurality of solder balls formed between the second conductive portions and the connecting pads for connecting the semiconductor component and the substrate, thereby preventing solder bridging from occurring between the adjacent conductive elements and reducing stresses between the conductive elements and the UBM layer.
Public/Granted literature
- US20150069605A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF AND SEMICONDUCTOR STRUCTURE Public/Granted day:2015-03-12
Information query
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