A resistive memory device includes a conductor and a resistive memory stack in contact with the conductor. The resistive memory stack includes a multi-component electrode and a switching region. The multi-component electrode includes a base electrode having a surface, and an inert material electrode on the base electrode surface in a form of i) a thin layer, or ii) discontinuous nano-islands. A switching region is in contact with the conductor and with the inert material electrode when the inert material electrode is in the form of the thin layer; or the switching region is in contact with the conductor, with the inert material electrode, and with an oxidized portion of the base electrode when the inert material electrode is in the form of the discontinuous nano-islands.