Invention Grant
- Patent Title: Forming non-line-of-sight source drain extension in an nMOS finFET using n-doped selective epitaxial growth
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Application No.: US15242078Application Date: 2016-08-19
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Publication No.: US09853129B2Publication Date: 2017-12-26
- Inventor: Matthias Bauer , Hans-Joachim Ludwig Gossmann , Benjamin Colombeau
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L29/08 ; H01L21/02 ; H01L21/306 ; H01L29/06 ; H01L29/26 ; H01L29/167 ; H01L29/16 ; H01L29/20
Abstract:
A finFET device includes an n-doped source and/or drain extension that is disposed between a gate spacer of the finFET and a bulk semiconductor portion of the semiconductor substrate on which the n-doped source or drain extension is disposed. The n-doped source or drain extension is formed by a selective epitaxial growth (SEG) process in a cavity formed proximate the gate spacer.
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