- 专利标题： Method of modifying the strain state of a semiconducting structure with stacked transistor channels
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申请号： US15049468申请日： 2016-02-22
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公开(公告)号： US09853130B2公开(公告)日： 2017-12-26
- 发明人: Sylvain Maitrejean , Emmanuel Augendre , Jean-Charles Barbe , Benoit Mathieu , Yves Morand
- 申请人： Commissariat a L'Energie Atomique et aux Energies Alternatives
- 申请人地址： FR Paris
- 专利权人： Commissariat á l'énergie atomique et aux énergies alternatives
- 当前专利权人： Commissariat á l'énergie atomique et aux énergies alternatives
- 当前专利权人地址： FR Paris
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： FR1551566 20150224
- 主分类号： H01L21/469
- IPC分类号： H01L21/469 ; H01L29/66 ; H01L29/06 ; H01L21/02 ; H01L29/78 ; H01L21/3065 ; H01L21/311 ; H01L29/423 ; H01L29/786
摘要：
A method of modifying a strain state of a first channel structure in a transistor is provided, said structure being formed from superposed semiconducting elements, the method including providing on a substrate at least one first semiconducting structure formed from a semiconducting stack including alternating elements based on at least one first semiconducting material and elements based on at least one second semiconducting material different from the first material; then removing portions of the second material from the first semiconducting structure by selective etching, the removed portions forming at least one empty space; filling the empty space with a dielectric material; forming a straining zone on the first semiconducting structure based on a first strained material having an intrinsic strain; and performing thermal annealing to cause the dielectric material to creep, and to cause a change in a strain state of the elements based on the first material.
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