Invention Grant
- Patent Title: Semiconductor package with improved signal stability and method of manufacturing the same
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Application No.: US14803566Application Date: 2015-07-20
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Publication No.: US09856418B2Publication Date: 2018-01-02
- Inventor: Takuya Kitabatake , Fusaki Fujibayashi , Hiroko Endo , Masahide Yamada , Takatoshi Seto
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: JP2014-147504 20140718; KR10-2015-0096053 20150706
- Main IPC: C09K11/08
- IPC: C09K11/08 ; C09K11/59 ; H01L33/00 ; C09K11/77

Abstract:
Disclosed is a phosphor including at least one of a nitride and an oxynitride, wherein the nitride and the oxynitride contain an alkaline-earth metal element, silicon, and an activator element. wherein the phosphor has a volume average particle diameter of greater than or equal to about 50 nm and less than or equal to about 400 nm and an inner quantum efficiency of greater than or equal to about 60% at an excitation wavelength of about 450 nm. The method of preparing a phosphor includes a precursor preparation process of preparing a phosphor precursor particles including a silicon nitride particles, a compound containing an alkaline-earth metal element, and a compound containing an activator element, wherein the compound containing an alkaline-earth metal element and the compound containing an activator element are deposited on the surface of the silicon nitride particles; and a firing process of firing the phosphor precursor particles.
Public/Granted literature
- US20160017222A1 PHOSPHOR AND METHOD OF PREPARING SAME Public/Granted day:2016-01-21
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