- 专利标题： Three-dimensional NAND non-volatile memory and dram memory devices on a single substrate
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申请号： US15670344申请日： 2017-08-07
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公开(公告)号： US09859004B1公开(公告)日： 2018-01-02
- 发明人: Johann Alsmeier
- 申请人： SANDISK TECHNOLOGIES LLC
- 申请人地址： US TX Plano
- 专利权人： SanDisk Technologies LLC
- 当前专利权人： SanDisk Technologies LLC
- 当前专利权人地址： US TX Plano
- 代理机构： Vierra Magen Marcus LLP
- 主分类号： G11C14/00
- IPC分类号： G11C14/00 ; H01L27/108 ; H01L27/11582 ; H01L27/1157 ; H01L27/11524 ; H01L27/11578 ; H01L27/11551 ; G11C16/04 ; H01L27/11556
摘要：
A method is provided that includes forming a three-dimensional NAND stacked non-volatile memory array on a substrate, and forming a DRAM memory array on the substrate. The three-dimensional NAND stacked non-volatile memory array and the DRAM memory array are formed using a single integrated circuit fabrication process.
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