- 专利标题： Ultrafast reliable silicon enabled battery and associated methods
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申请号： US13931539申请日： 2013-06-28
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公开(公告)号： US09859565B2公开(公告)日： 2018-01-02
- 发明人: Zhaohui Chen , Yang Liu , Charles W. Holzwarth , Nicolas Cirigliano , Bum Ki Moon
- 申请人： Zhaohui Chen , Yang Liu , Charles W. Holzwarth , Nicolas Cirigliano , Bum Ki Moon
- 申请人地址： US CA Santa Clara
- 专利权人： INTEL CORPORATION
- 当前专利权人： INTEL CORPORATION
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Thorpe North & Western, LLP
- 代理商 David W. Osborne
- 主分类号： H01M4/70
- IPC分类号： H01M4/70 ; H01M4/78 ; H01M10/24 ; H01M4/66 ; H01M4/48 ; H01M4/24 ; H01M4/38 ; H01M4/58 ; H01M10/04 ; H01M10/28 ; H01M6/40
摘要：
Ultrafast battery devices having enhanced reliability and power density are provided. Such batteries can include a cathode including a first silicon substrate having a cathode structured surface, an anode including a second silicon substrate having an anode structured surface positioned adjacent to the cathode such that the cathode structured surface faces the anode structured surface, and an electrolyte disposed between the cathode and the anode. The anode structured surface can be coated with an anodic active material and the cathode structured surface can be coated with a cathodic active material.