- 专利标题: Power density matching for power amplifiers
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申请号: US14872701申请日: 2015-10-01
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公开(公告)号: US09859944B2公开(公告)日: 2018-01-02
- 发明人: Edward John Wemyss Whittaker , Isabelle M. De Grandpré-Bérubé
- 申请人: SKYWORKS SOLUTIONS, INC.
- 申请人地址: US MA Woburn
- 专利权人: Skyworks Solutions, Inc.
- 当前专利权人: Skyworks Solutions, Inc.
- 当前专利权人地址: US MA Woburn
- 代理机构: Chang & Hale LLP
- 主分类号: H03F1/00
- IPC分类号: H03F1/00 ; H04B1/40 ; H03F3/19 ; H03F1/02 ; H03F3/195 ; H03F3/24
摘要:
Circuits and methods related to power amplifiers. In some implementations, a bias circuit includes a reference device connectable to receive a first electrical supply level, the reference device arranged to produce an electrical bias condition using the first electrical supply level, and the reference device connectable to provide the electrical bias condition to an amplifier device connectable to a second electrical supply level. The bias circuit also includes a power density translating circuit connectable between the reference device and the amplifier device, the power density matching circuit provided to substantially set a first power density associated with the reference device and a second power density associated with the amplifier device relative to one another, the first power density being a function of the first electrical supply level and the second power density being a function of the second electrical supply level.
公开/授权文献
- US20160118940A1 POWER DENSITY MATCHING FOR POWER AMPLIFIERS 公开/授权日:2016-04-28
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