发明授权
- 专利标题: Photomask blank
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申请号: US15239551申请日: 2016-08-17
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公开(公告)号: US09864266B2公开(公告)日: 2018-01-09
- 发明人: Kouhei Sasamoto , Yukio Inazuki
- 申请人: Shin-Etsu Chemical Co., Ltd.
- 申请人地址: JP Tokyo
- 专利权人: SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人: SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人地址: JP Tokyo
- 代理机构: Birch, Stewart, Kolach & Birch, LLP
- 优先权: JP2015-173895 20150903
- 主分类号: G03F1/50
- IPC分类号: G03F1/50 ; G03F1/38 ; G03F1/20 ; G03F1/26 ; G03F1/80
摘要:
A photomask blank comprising a transparent substrate and a chromium-containing film is provided. The chromium-containing film is constructed by one or more chromium compound layers which are formed of a chromium compound containing Cr, N and optionally O, and have a composition having a Cr content ≧30 at % and a total Cr+N+O content ≧93 at %, and meeting the formula: 3Cr≦2O+3N. A chromium compound layer meeting a first composition having an N/Cr atomic ratio ≧0.95, a Cr content ≧40 at %, a total Cr+N content ≧80 at %, and an O content ≦10 at % is included to a thickness of more than 70% to 100% of the overall thickness of the chromium-containing film.
公开/授权文献
- US20170068154A1 PHOTOMASK BLANK 公开/授权日:2017-03-09
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