- 专利标题： Cleaning method, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
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申请号： US14230356申请日： 2014-03-31
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公开(公告)号： US09865451B2公开(公告)日： 2018-01-09
- 发明人: Takaaki Noda , Shingo Nohara , Yoshiro Hirose
- 申请人： HITACHI KOKUSAI ELECTRIC INC.
- 申请人地址： JP Tokyo
- 专利权人： HITACHI KOKUSAI ELECTRIC, INC.
- 当前专利权人： HITACHI KOKUSAI ELECTRIC, INC.
- 当前专利权人地址： JP Tokyo
- 代理机构： Volpe and Koenig, P.C.
- 优先权： JP2013-137518 20130628
- 主分类号： H01L21/30
- IPC分类号： H01L21/30 ; H01L21/02 ; C23C16/44
摘要：
A method for cleaning an interior of a process chamber after performing a process of forming a carbon-containing film on a substrate in the process chamber includes performing a cycle a predetermined number of times. The cycle includes supplying a modifying gas into the process chamber to modify deposits including the carbon-containing film deposited on a surface of a member in the process chamber and supplying an etching gas into the process chamber to remove the modified deposits through a thermochemical reaction.
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