公开(公告)号：US10600642B2

公开(公告)日：2020-03-24

申请号：US15883962

申请日：2018-01-30

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Yoshiro Hirose ,  Yoshitomo Hashimoto

IPC分类号： H01L21/02 ,  C23C16/52 ,  C23C16/455 ,  C23C16/44 ,  C23C16/54

摘要： There is provided a technique which includes: forming a film containing at least Si, O and N on a substrate in a process chamber by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: forming a first layer by supplying a precursor gas containing at least a Si—N bond and a Si—Cl bond and a first catalyst gas to the substrate; exhausting the precursor gas and the first catalyst gas in the process chamber through an exhaust system; forming a second layer by supplying an oxidizing gas and a second catalyst gas to the substrate to modify the first layer; and exhausting the oxidizing gas and the second catalyst gas in the process chamber through the exhaust system.

公开(公告)号：US10199219B2

公开(公告)日：2019-02-05

申请号：US15620280

申请日：2017-06-12

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Satoshi Shimamoto ,  Yoshiro Hirose ,  Hajime Karasawa ,  Ryota Horiike ,  Naoharu Nakaiso ,  Yoshitomo Hashimoto

IPC分类号： H01L21/02 ,  C23C16/455 ,  C23C16/52 ,  C23C16/02 ,  C23C16/28

摘要： There is provided a method of manufacturing a semiconductor device, which includes: forming a first seed layer containing silicon and germanium on a substrate by performing, a predetermined number of times, a cycle which includes supplying a first process gas containing silicon or germanium and containing a halogen element to the substrate, supplying a second process gas containing silicon and not containing a halogen element to the substrate, and supplying a third process gas containing germanium and not containing a halogen element to the substrate; and forming a germanium-containing film on the first seed layer by supplying a fourth process gas containing germanium and not containing a halogen element to the substrate.

公开(公告)号：US10163625B2

公开(公告)日：2018-12-25

申请号：US15386859

申请日：2016-12-21

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Yoshinobu Nakamura ,  Kiyohiko Maeda ,  Yoshiro Hirose ,  Ryota Horiike ,  Yoshitomo Hashimoto

IPC分类号： H01L21/302 ,  H01L21/461 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/02 ,  C23C16/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/52 ,  H01L21/306 ,  H01L21/308 ,  C23C16/56

摘要： There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.

公开(公告)号：US10121654B2

公开(公告)日：2018-11-06

申请号：US15386859

申请日：2016-12-21

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Yoshinobu Nakamura ,  Kiyohiko Maeda ,  Yoshiro Hirose ,  Ryota Horiike ,  Yoshitomo Hashimoto

IPC分类号： H01L21/302 ,  H01L21/461 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/02 ,  C23C16/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/52 ,  H01L21/306 ,  H01L21/308 ,  C23C16/56

摘要： There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.

公开(公告)号：US09966252B2

公开(公告)日：2018-05-08

申请号：US14681067

申请日：2015-04-07

申请人： Hitachi Kokusai Electric Inc.

发明人： Ryota Sasajima ,  Yoshiro Hirose ,  Yosuke Ota ,  Naonori Akae ,  Kojiro Yokozawa

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/02 ,  C23C16/54 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  H01L21/314 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/321

CPC分类号： H01L21/0223 ,  C23C16/402 ,  C23C16/45546 ,  C23C16/54 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02238 ,  H01L21/02244 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/3141 ,  H01L21/31608 ,  H01L21/31645 ,  H01L21/32051 ,  H01L21/321

摘要： Provided is a method of manufacturing a semiconductor device. The method includes: (a) forming an oxide film having a predetermined thickness on a substrate by alternately repeating: (a-1) forming a layer containing a predetermined element on the substrate by supplying a source gas containing the predetermined element into a process vessel accommodating the substrate and exhausting the source gas from the process vessel; and (a-2) changing the layer containing the predetermined element into an oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas into the process vessel, wherein inside of the process vessel is under a heated atmosphere having a pressure lower than an atmospheric pressure; and exhausting the oxygen-containing gas and the hydrogen-containing gas from the process vessel; and (b) modifying the oxide film formed on the substrate by supplying the oxygen-containing gas and the hydrogen-containing gas into the process vessel, wherein the inside of the process vessel is under the heated atmosphere having the pressure lower than the atmospheric pressure, and exhausting the oxygen-containing gas and the hydrogen-containing gas from the process vessel.

公开(公告)号：US09865451B2

公开(公告)日：2018-01-09

申请号：US14230356

申请日：2014-03-31

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Takaaki Noda ,  Shingo Nohara ,  Yoshiro Hirose

IPC分类号： H01L21/30 ,  H01L21/02 ,  C23C16/44

CPC分类号： H01L21/02049 ,  C23C16/4405 ,  H01L21/02126

摘要： A method for cleaning an interior of a process chamber after performing a process of forming a carbon-containing film on a substrate in the process chamber includes performing a cycle a predetermined number of times. The cycle includes supplying a modifying gas into the process chamber to modify deposits including the carbon-containing film deposited on a surface of a member in the process chamber and supplying an etching gas into the process chamber to remove the modified deposits through a thermochemical reaction.

公开(公告)号：US09816181B2

公开(公告)日：2017-11-14

申请号：US14591544

申请日：2015-01-07

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Atsushi Sano ,  Yoshiro Hirose

IPC分类号： C23C16/36 ,  C23C16/30 ,  C23C16/455 ,  H01L21/02

CPC分类号： C23C16/36 ,  C23C16/30 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45546 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/0228

摘要： A method of manufacturing a semiconductor device, including forming a laminated film on a substrate by performing a cycle a first predetermined number of times. The cycle includes forming a first film which contains a predetermined element, boron, and nitrogen, and forming a second film which contains boron and nitrogen. A composition ratio of boron to nitrogen in the second film is different from that in the first film. The first film and the second film are laminated to form the laminated film.

公开(公告)号：US09583338B2

公开(公告)日：2017-02-28

申请号：US14496660

申请日：2014-09-25

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Yoshitomo Hashimoto ,  Yoshiro Hirose ,  Tatsuru Matsuoka

IPC分类号： H01L21/00 ,  H01L21/02 ,  C23C16/455 ,  C23C16/52

CPC分类号： H01L21/0228 ,  C23C16/36 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/52 ,  H01L21/02167 ,  H01L21/02211

摘要： According to the present disclosure, a film containing a predetermined element, carbon and nitrogen is formed with high controllability of a composition thereof. A method of manufacturing a semiconductor device includes forming a film containing a predetermined element, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a first processing gas containing the predetermined element and a halogen element to the substrate, supplying a second processing gas composed of three elements of carbon, nitrogen and hydrogen to the substrate, and supplying a third processing gas containing carbon to the substrate.

摘要翻译： 根据本公开，形成含有预定元素，碳和氮的膜，其组成具有高可控性。 制造半导体器件的方法包括通过执行预定次数的循环，在衬底上形成含有预定元素，碳和氮的膜。 该循环包括将含有预定元素的第一处理气体和卤素元素供应到基板，将由碳，氮和氢三个元素构成的第二处理气体供应到基板，并将含有碳的第三处理气体供应到基板 。

公开(公告)号：US09548198B2

公开(公告)日：2017-01-17

申请号：US14218484

申请日：2014-03-18

申请人： HITACHI KOKUSAI ELECTRIC INC. ,  L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE

发明人： Yoshiro Hirose ,  Norikazu Mizuno ,  Kazutaka Yanagita ,  Shingo Okubo

IPC分类号： H01L21/02 ,  C23C16/30 ,  C23C16/455

CPC分类号： H01L21/02126 ,  C23C16/30 ,  C23C16/45531 ,  C23C16/45534 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228

摘要： A method of manufacturing a semiconductor device including forming a thin film containing silicon, oxygen and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying a precursor gas containing silicon, carbon and a halogen element and having an Si—C bonding, and a first catalytic gas to the substrate; and supplying an oxidizing gas and a second catalytic gas to the substrate.

摘要翻译： 一种制造半导体器件的方法，包括通过执行预定次数的循环，在衬底上形成含有硅，氧和碳的薄膜，该循环包括：提供含有硅，碳和卤素元素的前体气体， Si-C键合和第一催化气体到基板; 以及向所述基板供给氧化气体和第二催化气体。

公开(公告)号：US09487861B2

公开(公告)日：2016-11-08

申请号：US15182722

申请日：2016-06-15

申请人： Hitachi-Kokusai Electric Inc.

发明人： Yushin Takasawa ,  Hajime Karasawa ,  Yoshiro Hirose

IPC分类号： C23C16/455 ,  C23C16/46 ,  C23C16/52 ,  H01L21/02

CPC分类号： H01L21/02271 ,  C23C14/542 ,  C23C16/0209 ,  C23C16/345 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45546 ,  C23C16/45557 ,  C23C16/46 ,  C23C16/50 ,  C23C16/52 ,  C23C28/36 ,  H01L21/02112 ,  H01L21/02123 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02145 ,  H01L21/02153 ,  H01L21/02161 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/02326 ,  H01L21/02332 ,  H01L21/3141 ,  H01L21/318 ,  H01L21/3185 ,  H01L21/67109

摘要： Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.

摘要翻译： 提供了通过执行预定次数的循环在基板上形成膜的技术。 该循环包括：通过向衬底供应含有第一元素的气体来形成第一层，其中第一层是不连续层，连续层或其中至少一个不连续层或连续层是 重叠 形成包括所述第一层的第二层和包括堆叠在所述第一层上的第二元素的不连续层; 以及通过向所述基板供给含有第三元素的气体来形成第三层，以在所述第二层由含有所述第三元素的气体的改性反应不饱和的条件下修饰所述第二层。