A semiconductor device includes a planar interconnection layer formed on a substrate and made of a semiconductor, a first pillar-shaped semiconductor layer formed on the interconnection layer, a semiconductor-metal compound layer formed so as to cover the entire upper surface of the interconnection layer except for a bottom portion of the first pillar-shaped semiconductor layer, a first gate insulating film surrounding the first pillar-shaped semiconductor layer, a first gate electrode surrounding the first gate insulating film, and a first gate line connected to the first gate electrode.