Invention Grant
- Patent Title: Semiconductor structure and method for manufacturing the same
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Application No.: US15488325Application Date: 2017-04-14
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Publication No.: US09865748B2Publication Date: 2018-01-09
- Inventor: Hsin-Chih Chiang , Tung-Yang Lin , Chih-Chang Cheng , Ruey-Hsin Liu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L29/68
- IPC: H01L29/68 ; H01L29/87 ; H01L29/66 ; H01L29/06

Abstract:
A semiconductor structure includes a semiconductor substrate having a first electrical portion, a second electrical portion, and a bridged conductive layer. The first electrical portion includes a first semiconductor well, a second semiconductor well in the first semiconductor well, and a third semiconductor well and a fourth semiconductor well in the second semiconductor well. The second electrical portion includes a fifth semiconductor well, a semiconductor layer in the fifth semiconductor well, and a sixth semiconductor well and a seventh semiconductor well in the fifth semiconductor well. The semiconductor layer has separated first and second portions. The bridged conductive layer connects the fourth semiconductor well and the sixth semiconductor well.
Public/Granted literature
- US20170222063A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2017-08-03
Information query
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