Invention Grant
- Patent Title: Low temperature poly-silicon TFT substrate
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Application No.: US14888451Application Date: 2015-10-26
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Publication No.: US09869912B2Publication Date: 2018-01-16
- Inventor: Yong Xu
- Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd. , Wuhan China Star Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Shenzhen, Guangdong CN Wuhan, Hubei
- Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.,WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.,WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Shenzhen, Guangdong CN Wuhan, Hubei
- Agent Leong C. Lei
- Priority: CN201510641280 20150930
- International Application: PCT/CN2015/092792 WO 20151026
- International Announcement: WO2017/054271 WO 20170406
- Main IPC: H01L29/78
- IPC: H01L29/78 ; G02F1/1362 ; G02F1/1368 ; H01L29/786

Abstract:
The present invention provides a LTPS TFT substrate, which includes a black matrix arranged on a first buffer layer of the LTPS TFT substrate to have an area where a TFT device is located is shielded by the black matrix thereby preventing the TFT device from being influenced by light irradiation, maintaining stability of the TFT device; and also saving the manufacturing process of a shielding metal layer, reducing one photo-mask, and lowering down manufacturing cost so as to allow the black matrix, in achieving the functionality of its own (shielding leaking light of the pixel), to also take the place of a shielding metal layer that is commonly adopted in the prior art to shield light for the TFT device and thus providing duality of functionality.
Public/Granted literature
- US20170160611A1 LOW TEMPERATURE POLY-SILICON TFT SUBSTRATE Public/Granted day:2017-06-08
Information query
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