Invention Grant
- Patent Title: Field-effect transistors with a non-relaxed strained channel
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Application No.: US15060067Application Date: 2016-03-03
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Publication No.: US09871057B2Publication Date: 2018-01-16
- Inventor: Karen A. Nummy , Claude Ortolland
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Thompson Hine LLP
- Agent Yuanmin Cai
- Main IPC: H01L27/01
- IPC: H01L27/01 ; H01L27/12 ; H01L31/0392 ; H01L29/06 ; H01L29/161 ; H01L27/092 ; H01L21/84 ; H01L21/8238 ; H01L29/10

Abstract:
Device structures for a field-effect transistor and methods of forming such device structures using a device layer of a silicon-on-insulator substrate. A channel and an isolation region are formed in the device layer. The channel is located beneath a gate structure is formed on the device layer and is comprised of a semiconductor material under strain. A portion of the device layer is located between the first isolation region and the channel. The portion of the device layer is under a strain that is less than the strain in the semiconductor material of the channel.
Public/Granted literature
- US20170256565A1 FIELD-EFFECT TRANSISTORS WITH A NON-RELAXED STRAINED CHANNEL Public/Granted day:2017-09-07
Information query
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