Invention Grant
- Patent Title: High voltage tolerant word-line driver
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Application No.: US15115455Application Date: 2014-03-03
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Publication No.: US09875783B2Publication Date: 2018-01-23
- Inventor: Cyrille Dray , Liqiong Wei
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: INTEL CORPORATION
- Current Assignee: INTEL CORPORATION
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- International Application: PCT/US2014/019917 WO 20140303
- International Announcement: WO2015/133987 WO 20150911
- Main IPC: G11C8/08
- IPC: G11C8/08 ; G11C11/16 ; G11C11/408

Abstract:
Described is a word-line driver which is operable to switch a voltage level of a word-line to one of: first power supply, second power supply, or third power supply wherein the voltage level of the second power supply is higher than the voltage level of the first power supply, and wherein transistors of the word-line driver have same gate oxide thicknesses.
Public/Granted literature
- US20170169874A1 HIGH VOLTAGE TOLERANT WORD-LINE DRIVER Public/Granted day:2017-06-15
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