Invention Grant
- Patent Title: Integrated circuit device
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Application No.: US15412072Application Date: 2017-01-23
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Publication No.: US09881892B2Publication Date: 2018-01-30
- Inventor: Jung-Fu Hsu , Tai-Hung Lin , Chang-Tien Tsai
- Applicant: Novatek Microelectronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: Novatek Microelectronics Corp.
- Current Assignee: Novatek Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Priority: TW100111301A 20110331
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L23/00 ; H01L27/02 ; H01L23/50

Abstract:
An integrated circuit device including a semiconductor substrate, a first bonding pad structure, a second bonding pad structure, a third bonding pad structure, a first internal bonding wire, and a second internal bonding wire is provided. The first bonding pad structure is disposed on a surface of the semiconductor substrate and exposed outside of the semiconductor substrate. The second bonding pad structure is disposed on the surface of the semiconductor substrate and exposed outside of the semiconductor substrate. The third bonding pad structure is disposed on the surface of the semiconductor substrate and exposed outside of the semiconductor substrate. The first bonding pad structure is electrically coupled to the third bonding pad structure via the first internal bonding wire. The third bonding pad structure is electrically coupled to the second bonding pad structure via the second internal bonding wire.
Public/Granted literature
- US20170133343A1 INTEGRATED CIRCUIT DEVICE Public/Granted day:2017-05-11
Information query
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