Invention Grant
- Patent Title: Thin film transistor substrate and display using the same
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Application No.: US14629544Application Date: 2015-02-24
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Publication No.: US09881986B2Publication Date: 2018-01-30
- Inventor: Seongpil Cho , Yongil Kim
- Applicant: LG Display Co., Ltd.
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Morgan, Lewis & Bockius LLP
- Priority: KR10-2014-0021500 20140224; KR10-2015-0025174 20150223
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/04 ; H01L27/32 ; H01L29/786 ; H01L27/12

Abstract:
Provided are a thin film transistor (TFT) substrate and a display using the same. A display includes: a first TFT, including: a polycrystalline semiconductor layer, a first gate electrode thereover, a first source electrode, and a first drain electrode, a second TFT, including: a second gate electrode, an oxide semiconductor layer over the second gate electrode, a second source electrode, and a second drain electrode, an intermediate insulating layer including a nitride layer, on the first gate electrode, and an oxide layer covering the second gate electrode, on the intermediate insulating layer, on the oxide layer, and overlapping the second gate electrode, wherein the first source, first drain, and second gate electrodes are between the intermediate insulating layer and the oxide layer, and wherein the second source and the second drain electrodes are on the oxide semiconductor layer.
Public/Granted literature
- US20150243724A1 THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY USING THE SAME Public/Granted day:2015-08-27
Information query
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