公开(公告)号：US09881986B2

公开(公告)日：2018-01-30

申请号：US14629544

申请日：2015-02-24

Applicant: LG Display Co., Ltd.

Inventor： Seongpil Cho ,  Yongil Kim

IPC: H01L29/10 ,  H01L29/04 ,  H01L27/32 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L27/3276 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/3262 ,  H01L29/04 ,  H01L29/78606 ,  H01L29/7869

Abstract: Provided are a thin film transistor (TFT) substrate and a display using the same. A display includes: a first TFT, including: a polycrystalline semiconductor layer, a first gate electrode thereover, a first source electrode, and a first drain electrode, a second TFT, including: a second gate electrode, an oxide semiconductor layer over the second gate electrode, a second source electrode, and a second drain electrode, an intermediate insulating layer including a nitride layer, on the first gate electrode, and an oxide layer covering the second gate electrode, on the intermediate insulating layer, on the oxide layer, and overlapping the second gate electrode, wherein the first source, first drain, and second gate electrodes are between the intermediate insulating layer and the oxide layer, and wherein the second source and the second drain electrodes are on the oxide semiconductor layer.

公开(公告)号：US09214508B2

公开(公告)日：2015-12-15

申请号：US14628411

申请日：2015-02-23

Applicant: LG Display Co., Ltd.

Inventor： Seongpil Cho ,  Yongil Kim

IPC: H01L29/12 ,  H01L27/32 ,  H01L27/12 ,  H01L29/786 ,  H01L29/04

CPC classification number: H01L27/1251 ,  G02F1/1362 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/04 ,  H01L29/78606 ,  H01L29/78675 ,  H01L29/7869

Abstract: Provided are a thin film transistor (TFT) substrate and a display using the same. A TFT substrate includes: a substrate, a first TFT on the substrate, including: a polycrystalline semiconductor layer, a first gate electrode thereover, a first source electrode, and a first drain electrode, a second TFT on the substrate, including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, an intermediate insulating layer including a nitride layer, on the first gate electrode, and an oxide layer covering the second gate electrode, on the intermediate insulating layer, on the oxide layer, and overlapping the second gate electrode, wherein the first source, first drain, and second gate electrodes are between the intermediate insulating layer and the oxide layer, and wherein the second source and the second drain electrodes are on the oxide semiconductor layer.

Abstract translation: 提供薄膜晶体管（TFT）基板和使用其的显示器。 TFT基板包括：基板，在基板上的第一TFT，包括：多晶半导体层，其上的第一栅电极，第一源电极和第一漏电极，基板上的第二TFT，包括：第二TFT 栅电极，第二栅电极上的氧化物半导体层，第二源电极和第二漏电极，在第一栅电极上包括氮化物层的中间绝缘层和覆盖第二栅电极的氧化物层，在 所述中间绝缘层在所述氧化物层上并且与所述第二栅电极重叠，其中所述第一源极，第一漏极和所述第二栅电极位于所述中间绝缘层和所述氧化物层之间，并且其中所述第二源极和所述第二漏极 在氧化物半导体层上。

公开(公告)号：US09857648B2

公开(公告)日：2018-01-02

申请号：US14501392

申请日：2014-09-30

Applicant: LG Display Co., Ltd.

Inventor： Minjoo Kim ,  Soyoung Noh ,  Yongil Kim ,  Taehwan Kim

IPC: G02F1/1343 ,  G02F1/1362

CPC classification number: G02F1/136227 ,  G02F1/134363 ,  G02F2001/134372

Abstract: A disclosed liquid crystal display includes a substrate with a gate electrode, a gate insulation film, an active layer, a source electrode, a drain electrode, and a first passivation film formed on the substrate. An organic insulation film having a first contact hole and a common electrode having a second contact hole are formed on the first passivation film using a single mask. The display also includes a second passivation film on the common electrode, and a pixel electrode on the second passivation film and connected to the drain electrode via the contact hole through the second passivation film. The top surface of the organic insulation film adjacent to a side edge of the organic insulation film is uncovered by the common electrode.

公开(公告)号：US09484392B2

公开(公告)日：2016-11-01

申请号：US14584042

申请日：2014-12-29

Applicant: LG Display Co., Ltd.

Inventor： Jinbok Lee ,  Yongil Kim ,  Eunhye Lee

IPC: H01L29/49 ,  H01L27/32 ,  H01L51/52 ,  H01L51/56

CPC classification number: H01L27/3244 ,  H01L27/322 ,  H01L51/5268 ,  H01L51/5271 ,  H01L51/5284 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/301 ,  H01L2251/303 ,  H01L2251/558

Abstract: A flat panel display having a low reflective black matrix and a method for manufacturing the same are provided. The flat panel display includes a substrate having an open area and a non-open area; a hazy layer disposed in the non-open area on the inner surface of the substrate; a black matrix stacked on the hazy layer; a driving element disposed in the non-opening area; and a display element disposed in the open area and driven by the driving element.

Abstract translation: 提供了具有低反射黑矩阵的平板显示器及其制造方法。 平板显示器包括具有开放区域和非开放区域的基板; 设置在所述基板的内表面上的非开放区域中的模糊层; 堆叠在朦胧层上的黑色矩阵; 设置在所述非开口区域中的驱动元件; 以及设置在所述开放区域中并由所述驱动元件驱动的显示元件。

公开(公告)号：US09455279B2

公开(公告)日：2016-09-27

申请号：US14921099

申请日：2015-10-23

Applicant: LG Display Co., Ltd.

Inventor： Seongpil Cho ,  Yongil Kim

IPC: H01L27/32 ,  H01L27/12 ,  G02F1/1362 ,  H01L29/786 ,  H01L29/04

CPC classification number: H01L27/1251 ,  G02F1/1362 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/04 ,  H01L29/78606 ,  H01L29/78675 ,  H01L29/7869

Abstract: Provided are a thin film transistor (TFT) substrate and a display using the same. A TFT substrate includes: a substrate, a first TFT on the substrate, including: a polycrystalline semiconductor layer, a first gate electrode thereover, a first source electrode, and a first drain electrode, a second TFT on the substrate, including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, an intermediate insulating layer including a nitride layer, on the first gate electrode, and an oxide layer covering the second gate electrode, on the intermediate insulating layer, on the oxide layer, and overlapping the second gate electrode, wherein the first source, first drain, and second gate electrodes are between the intermediate insulating layer and the oxide layer, and wherein the second source and the second drain electrodes are on the oxide semiconductor layer.

Abstract translation: 提供薄膜晶体管（TFT）基板和使用其的显示器。 TFT基板包括：基板，在基板上的第一TFT，包括：多晶半导体层，其上的第一栅电极，第一源电极和第一漏电极，基板上的第二TFT，包括：第二TFT 栅电极，第二栅电极上的氧化物半导体层，第二源电极和第二漏电极，在第一栅电极上包括氮化物层的中间绝缘层和覆盖第二栅电极的氧化物层，在 所述中间绝缘层在所述氧化物层上并且与所述第二栅电极重叠，其中所述第一源极，第一漏极和所述第二栅电极位于所述中间绝缘层和所述氧化物层之间，并且其中所述第二源极和所述第二漏极 在氧化物半导体层上。

公开(公告)号：US20240008310A1

公开(公告)日：2024-01-04

申请号：US18213527

申请日：2023-06-23

Applicant: LG Display Co., Ltd.

Inventor： Bokyoung Lee ,  Yongil Kim ,  Hyeona Kim

IPC: H10K59/121 ,  H10K59/80

CPC classification number: H10K59/1213 ,  H10K59/8792 ,  H10K59/1216

Abstract: Provided is an organic light emitting display device including a light emitting element, a driving transistor configured to provide a driving current to the light emitting element and including a first oxide semiconductor layer and a first gate electrode on disposed the first oxide semiconductor layer, a first light blocking layer overlapping the first oxide semiconductor layer under the first oxide semiconductor layer, and at least one insulating layer disposed between the first light blocking layer and the first gate electrode and made of a hydrogen-free silicon nitride material. Accordingly, it is possible to increase an S-factor of the driving transistor using the oxide semiconductor layer and secure performance.