Invention Grant
- Patent Title: Physical vapor deposition system and physical vapor depositing method using the same
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Application No.: US14622397Application Date: 2015-02-13
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Publication No.: US09887073B2Publication Date: 2018-02-06
- Inventor: Chih-Chien Chi , Hung-Wen Su , Pei-Hsuan Lee
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01J37/34
- IPC: H01J37/34 ; C23C14/35 ; C23C14/04

Abstract:
A physical vapor deposition system includes a chamber, a cover plate, a pedestal, and a collimator. The cover plate is disposed on the chamber for holding a target. The pedestal is disposed in the chamber for supporting a wafer. The collimator is mounted between the cover plate and the pedestal. The collimator includes a plurality of sidewall sheets together forming a plurality of passages. At least one of the passages has an entrance and an exit opposite to the entrance. The entrance faces the cover plate, and the exit faces the pedestal. A thickness of one of the sidewall sheets at the entrance is thinner than a thickness of the sidewall sheet at the exit.
Public/Granted literature
- US20160240357A1 PHYSICAL VAPOR DEPOSITION SYSTEM AND PHYSICAL VAPOR DEPOSITING METHOD USING THE SAME Public/Granted day:2016-08-18
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