A standard cell CMOS device includes metal oxide semiconductor transistors having gates formed from gate interconnects. The gate interconnects extend in a first direction. The device further includes power rails that provide power to the transistors. The power rails extend in a second direction orthogonal to the first direction. The device further includes M1 layer interconnects extending between the power rails. At least one of the M1 layer interconnects is coupled to at least one of the transistors. The M1 layer interconnects are parallel to the gate interconnects and extend in the first direction only.