Invention Grant
- Patent Title: Process method and structure for high voltage MOSFETs
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Application No.: US13892191Application Date: 2013-05-10
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Publication No.: US09887283B2Publication Date: 2018-02-06
- Inventor: Yongping Ding , Lei Zhang , Hong Chang , Jongoh Kim , John Chen
- Applicant: Yongping Ding , Lei Zhang , Hong Chang , Jongoh Kim , John Chen
- Applicant Address: US CA Sunnyvale
- Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee Address: US CA Sunnyvale
- Agent Bo-In Lin
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L21/265
Abstract:
This invention discloses a semiconductor power device disposed in a semiconductor substrate. The semiconductor power device comprises a plurality of trenches each having a trench endpoint with an endpoint sidewall perpendicular to a longitudinal direction of the trench and extends vertically downward from a top surface to a trench bottom surface. The semiconductor power device further includes a trench bottom dopant region disposed below the trench bottom surface and a sidewall dopant region disposed along the endpoint sidewall wherein the sidewall dopant region extends vertically downward along the endpoint sidewall of the trench to reach the trench bottom dopant region and pick-up the trench bottom dopant region to the top surface of the semiconductor substrate.
Public/Granted literature
- US20140332844A1 A PROCESS METHOD AND STRUCTURE FOR HIGH VOLTAGE MOSFETS Public/Granted day:2014-11-13
Information query
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