Invention Grant
- Patent Title: Gate drive circuit to reduce parasitic coupling
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Application No.: US15147920Application Date: 2016-05-06
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Publication No.: US09887697B2Publication Date: 2018-02-06
- Inventor: Christopher Joseph Lee , Luke Anthony Solomon , Alfred Permuy
- Applicant: GE Energy Power Conversion Technology Ltd.
- Applicant Address: GB
- Assignee: GE ENERGY POWER CONVERSION TECHNOLOGY LTD
- Current Assignee: GE ENERGY POWER CONVERSION TECHNOLOGY LTD
- Current Assignee Address: GB
- Agency: GE Global Patent Operation
- Agent Scott R. Stanley
- Priority: FR1554105 20150507
- Main IPC: H03K17/61
- IPC: H03K17/61 ; H02M1/088 ; H03K17/567 ; H03K17/691 ; H03K17/10 ; H03K17/16

Abstract:
A drive circuit including a first transformer unit in connection with a pulse amplifier module and a second transformer unit in connection with a plurality of power semiconductor groups, each group containing one or more power devices. The first transformer unit includes at least one primary transformer configured to receive a current pulse at a primary winding from a current pulse generation module, the current pulse being reflected to a secondary winding. The second transformer unit includes a plurality of secondary transformers where each secondary transformer is configured to receive the current pulse at a primary winding thereof, the current pulse being reflected to a secondary winding coupled to a pulse receiver module. The first and second transformer units reduce parasitic coupling between the pulse receiver module and the control module.
Public/Granted literature
- US20160329889A1 GATE DRIVE CIRCUIT TO REDUCE PARASITIC COUPLING Public/Granted day:2016-11-10
Information query
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