Invention Grant
- Patent Title: Current generation circuit, and bandgap reference circuit and semiconductor device including the same
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Application No.: US15597282Application Date: 2017-05-17
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Publication No.: US09891650B2Publication Date: 2018-02-13
- Inventor: Atsushi Motozawa , Yuichi Okuda
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, PC
- Priority: JP2014-082566 20140414
- Main IPC: G05F3/30
- IPC: G05F3/30 ; G05F3/26 ; G05F3/24

Abstract:
A current generation circuit including a first and a second bipolar transistors, a current distribution circuit that makes a first current and a second current flow through the first and second bipolar transistors, respectively, the first current and the second current corresponding to a first control voltage, a first NMOS transistor disposed between the first bipolar transistor and the first current distribution circuit, a second NMOS transistor disposed between the second bipolar transistor and the first current distribution circuit, a first resistive element, a first operational amplifier that outputs the second control voltage to the gates of the first and the second NMOS transistors according to a drain voltage of the first NMOS transistor and a reference bias voltage, and a second operational amplifier that generates the first control voltage according to a drain voltage of the second NMOS transistor and the reference bias voltage.
Public/Granted literature
- US20170248984A1 CURRENT GENERATION CIRCUIT, AND BANDGAP REFERENCE CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME Public/Granted day:2017-08-31
Information query
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