Invention Grant
- Patent Title: Hard mask composition, carbon nanotube layer structure, pattern forming method, and manufacturing method of semiconductor device
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Application No.: US15285570Application Date: 2016-10-05
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Publication No.: US09892915B2Publication Date: 2018-02-13
- Inventor: Seung Yun Yang , Seung Hyun Lee , Kyoung Sil Park , Yool Kang , Yi Seul Kim , Yun Seok Choi
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2015-0185961 20151224
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/027 ; H01L21/02 ; H01L21/308
Abstract:
A manufacturing method of a semiconductor device includes forming a hard mask layer on a semiconductor substrate using a hard mask composition. Hard mask patterns are formed by patterning the hard mask layer. Semiconductor patterns are formed by etching the semiconductor substrate using the hard mask patterns. The hard mask composition includes a plurality of first carbon nanotubes (CNTs) having a first length, a plurality of second CNTs having a second length, which is at least 3 times the first length, and a dispersing agent in which the first CNTs and the second CNTs are dispersed. The total mass of the first CNTs is 1 to 2.5 times the total mass of the second CNTs.
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