Invention Grant
- Patent Title: Method for producing an optoelectronic semiconductor component and optoelectronic semiconductor component
-
Application No.: US15514489Application Date: 2015-09-24
-
Publication No.: US09893232B2Publication Date: 2018-02-13
- Inventor: Bernd Boehm , Daniel Zaspel , Stefan Hartauer , Bjoern Hoxhold
- Applicant: OSRAM Opto Semiconductors GmbH , OSRAM GmbH
- Applicant Address: DE Regensburg DE München
- Assignee: OSRAM Opto Semiconductors GmbH,OSRAM GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH,OSRAM GmbH
- Current Assignee Address: DE Regensburg DE München
- Agency: McDermott Will & Emery LLP
- Priority: DE102014114188 20140930
- International Application: PCT/EP2015/072013 WO 20150924
- International Announcement: WO2016/050608 WO 20160407
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
The invention provides an optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component (10), comprising the following steps: A) arranging at least one semiconductor chip (2) on a carrier (1), B) applying an electrically insulating photoresist (3) to a top side (1a) of the carrier (1) and to the semiconductor chip (2), C) curing the photoresist (3) with a baking step, D) patterning the photoresist (3) by exposure, F) developing the photoresist (3), wherein the photoresist (3) is removed at least from a radiation penetration surface (2b) of the semiconductor chip (2), G) again curing the photoresist (3) with a baking step, and H) applying an electrically conductive contact layer (4) to the photoresist (3), wherein the electrically conductive contact layer (4) is in places at a distance (A) from a marginal surface (3a) of the photoresist (3) which faces towards the semiconductor chip (2), wherein the marginal surface (3a) facing towards the semiconductor chip (2) is exposed in places.
Public/Granted literature
Information query
IPC分类: