- 专利标题: Element and formation method of film
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申请号: US15416610申请日: 2017-01-26
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公开(公告)号: US09894762B2公开(公告)日: 2018-02-13
- 发明人: Shunpei Yamazaki , Teppei Oguni , Kiyofumi Ogino , Hisao Ikeda
- 申请人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 申请人地址: JP Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., LTD.
- 当前专利权人: Semiconductor Energy Laboratory Co., LTD.
- 当前专利权人地址: JP Kanagawa-ken
- 代理机构: Nixon Peabody LLP
- 代理商 Jeffrey L. Costellia
- 优先权: JP2013-249210 20131202; JP2013-249212 20131202; JP2014-121142 20140612
- 主分类号: H05K1/09
- IPC分类号: H05K1/09 ; G06F3/044 ; H01B1/04 ; H05K3/06 ; H01L27/32 ; H01L51/52
摘要:
A novel element is provided. A novel film formation method is provided. A novel element manufacturing method is provided. Furthermore, a film including graphene is formed at low cost and high yield. The element includes a first electrode and a second electrode located apart from the first electrode. The first electrode and the second electrode include graphene. The film including graphene is formed through a first step of forming a film including graphene oxide over a substrate, a second step of immersing the film including graphene oxide in an acidic solution, and a third step of reducing graphene oxide included in the film including graphene oxide. Furthermore, before graphene oxide included in the film including graphene oxide is reduced, the film including graphene oxide is selectively removed by a photolithography technique.
公开/授权文献
- US20170139508A1 ELEMENT AND FORMATION METHOD OF FILM 公开/授权日:2017-05-18
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