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    Display device and system
    1.
    发明授权
    Display device and system 有权

    公开(公告)号：US12239005B2

    公开(公告)日：2025-02-25

    申请号：US18417153

    申请日：2024-01-19

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Daisuke Kubota ,  Ryo Hatsumi ,  Taisuke Kamada ,  Yuji Iwaki ,  Junpei Momo ,  Shunpei Yamazaki

    IPC: H10K65/00 ,  A61B5/00 ,  A61B5/1172 ,  A61B5/145 ,  A61B5/1455 ,  G06F3/044 ,  G06V40/12 ,  G06V40/13 ,  G09F9/33 ,  H01L25/18 ,  H10K30/80 ,  H10K59/40

    Abstract: A display device having a photosensing function is provided. A display device having a biometric authentication function typified by fingerprint authentication is provided. A display device having a touch panel function and a biometric authentication function is provided. The display device includes a first substrate, a light guide plate, a first light-emitting element, a second light-emitting element, and a light-receiving element. The first substrate and the light guide plate are provided to face each other. The first light-emitting element and the light-receiving element are provided between the first substrate and the light guide plate. The first light-emitting element has a function of emitting first light through the light guide plate. The second light-emitting element has a function of emitting second light to a side surface of the light guide plate. The light-receiving element has functions of receiving the first light and converting the first light into an electric signal and functions of receiving the second light and converting the second light into an electric signal. The first light includes visible light, and the second light includes infrared light.

    Semiconductor device
    2.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US12237424B2

    公开(公告)日：2025-02-25

    申请号：US18524033

    申请日：2023-11-30

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei Yamazaki ,  Hideomi Suzawa

    IPC: H01L29/12 ,  H01L29/04 ,  H01L29/49 ,  H01L29/51 ,  H01L29/786

    Abstract: A transistor that is to be provided has such a structure that a source electrode layer and a drain electrode layer between which a channel formation region is sandwiched has regions projecting in a channel length direction at lower end portions, and an insulating layer is provided, in addition to a gate insulating layer, between the source and drain electrode layers and a gate electrode layer. In the transistor, the width of the source and drain electrode layers is smaller than that of an oxide semiconductor layer in the channel width direction, so that an area where the gate electrode layer overlaps with the source and drain electrode layers can be made small. Further, the source and drain electrode layers have regions projecting in the channel length direction at lower end portions.

    Memory device, operation method of memory device, data processing device, data processing system, and electronic device
    3.
    发明授权
    Memory device, operation method of memory device, data processing device, data processing system, and electronic device 有权

    公开(公告)号：US12237019B2

    公开(公告)日：2025-02-25

    申请号：US17772740

    申请日：2020-10-16

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Takayuki Ikeda ,  Hitoshi Kunitake

    IPC: G11C16/26 ,  G06N3/063

    Abstract: A low-power memory device in which a NAND flash memory and a controller are connected to each other with a short wiring, the controller and a cache memory are connected to each other with a short wiring, and signal transmission delay is small is provided. For example, the NAND flash memory is formed using a Si transistor formed with a single crystal silicon substrate. Since an OS transistor can be formed by a method such as a thin-film method, the cache memory formed using the OS memory can be stacked over the NAND flash memory. When the NAND flash memory and the cache memory are formed in one chip, the NAND flash memory and the controller can be connected to each other with a short wiring, and the controller and the cache memory can be connected to each other with a short wiring.

    Semiconductor device and display device including the semiconductor device
    4.
    发明授权
    Semiconductor device and display device including the semiconductor device 有权

    公开(公告)号：US12230719B2

    公开(公告)日：2025-02-18

    申请号：US17902010

    申请日：2022-09-02

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Daisuke Kurosaki ,  Yasutaka Nakazawa

    IPC: H01L29/786 ,  H01L27/12

    Abstract: To improve field-effect mobility and reliability of a transistor including an oxide semiconductor film. A semiconductor device includes an oxide semiconductor film, a gate electrode, an insulating film over the gate electrode, the oxide semiconductor film over the insulating film, and a pair of electrodes over the oxide semiconductor film. The oxide semiconductor film includes a first oxide semiconductor film and a second oxide semiconductor film over the first oxide semiconductor film. The first oxide semiconductor film and the second oxide semiconductor film, include the same element. The first oxide semiconductor film includes a region having lower crystallinity than the second oxide semiconductor film.

    Arithmetic device and electronic device
    7.
    发明授权
    Arithmetic device and electronic device 有权

    公开(公告)号：US12229661B2

    公开(公告)日：2025-02-18

    申请号：US18510784

    申请日：2023-11-16

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Takahiko Ishizu ,  Takayuki Ikeda ,  Atsuo Isobe ,  Atsushi Miyaguchi ,  Shunpei Yamazaki

    IPC: G06N3/065 ,  G06F1/3234 ,  G06F7/544 ,  G06T1/20

    Abstract: An arithmetic device and an electronic device having small power consumption is provided. An arithmetic device and an electronic device capable of high-speed operation is provided. An arithmetic device and an electronic device capable of suppressing heat generation is provided. The arithmetic device includes a first arithmetic portion and a second arithmetic portion. The first arithmetic portion includes a first CPU core and a second CPU core. The second arithmetic portion includes a first GPU core and a second GPU core. The CPU cores each have a power gating function and each include a first data retention circuit electrically connected to a flip-flop. The first GPU core includes a second data retention circuit capable of retaining an analog value and reading out the analog value as digital data of two or more bits. The second GPU core includes a third data retention circuit capable of retaining a digital value and reading out the digital value as digital data of one bit. The first to third data retention circuits each include a transistor including an oxide semiconductor and a capacitor.

    Oxide semiconductor device
    8.
    发明授权
    Oxide semiconductor device 有权

    公开(公告)号：US12224293B2

    公开(公告)日：2025-02-11

    申请号：US18399990

    申请日：2023-12-29

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei Yamazaki ,  Yuichi Sato ,  Hitoshi Nakayama

    IPC: H01L27/13 ,  H01L27/12 ,  H01L29/24 ,  H10B12/00

    Abstract: A semiconductor device including: a first insulator in which an opening is formed; a first conductor positioned in the opening; a first oxide over the first insulator; a second oxide over the first oxide; a third oxide and a fourth oxide over the second oxide; a second conductor over the third oxide and the first conductor; a third conductor over the fourth oxide; a fifth oxide over the second oxide; a second insulator over the fifth oxide; and a fourth conductor positioned over the second insulator and overlapping with the fifth oxide. The fifth oxide is in contact with each of a side surface of the third oxide and a side surface of the fourth oxide. The conductivity of the third oxide is higher than the conductivity of the second oxide. The second conductor is in contact with the top surface of the first conductor.

    Functional panel, display device, input/output device, and data processing device
    10.
    发明授权
    Functional panel, display device, input/output device, and data processing device 有权

    公开(公告)号：US12205979B2

    公开(公告)日：2025-01-21

    申请号：US18236029

    申请日：2023-08-21

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei Yamazaki ,  Takayuki Ikeda

    IPC: H01L27/15 ,  G06F3/01 ,  G06F3/041 ,  G09G3/32 ,  H01L25/18 ,  G06F3/02 ,  G06F3/16

    Abstract: A novel functional panel that is highly convenient or highly reliable is provided. The functional panel includes a first pixel. The first pixel includes a first element, a color conversion layer, and a first functional layer. The first functional layer is positioned between the first element and the color conversion layer. The first element has a function of emitting light and contains gallium nitride. The color conversion layer has a function of converting the color of light emitted from the first element into a different color. The first functional layer includes a first insulating film and a pixel circuit. The first insulating film includes a region positioned between the pixel circuit and the first element, and has an opening. The pixel circuit includes a first transistor. The first transistor includes a first oxide semiconductor film and is electrically connected to the first element through the opening.

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