- 专利标题: Self-aligned non-mandrel cut formation for tone inversion
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申请号: US15494803申请日: 2017-04-24
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公开(公告)号: US09905424B1公开(公告)日: 2018-02-27
- 发明人: Shao Beng Law
- 申请人: GLOBALFOUNDRIES Inc.
- 申请人地址: KY Grand Cayman
- 专利权人: GLOBALFOUNDRIES Inc.
- 当前专利权人: GLOBALFOUNDRIES Inc.
- 当前专利权人地址: KY Grand Cayman
- 代理机构: Thompson Hine LLP
- 代理商 Anthony Canale
- 主分类号: H01L21/033
- IPC分类号: H01L21/033 ; H01L21/768
摘要:
Methods of forming self-aligned non-mandrel cuts during the fabrication of an interconnect structure. A first dielectric hardmask layer is formed on a metal hardmask layer. A plurality of mandrels are formed on the first dielectric hardmask layer, and a plurality of spacers are formed on the first dielectric hardmask layer. The spacers are located adjacent to the mandrels. A first sacrificial layer is formed that fills spaces between the spacers, and a second dielectric hardmask layer is formed on the first sacrificial layer, the spacers, and the mandrels. A plurality of sections of a second sacrificial layer are formed on the second dielectric hardmask layer and cover the second dielectric hardmask layer over a plurality of areas that are used to form the non-mandrel cuts.
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