Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
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Application No.: US14985969Application Date: 2015-12-31
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Publication No.: US09905462B2Publication Date: 2018-02-27
- Inventor: Atsuko Sakata , Takeshi Ishizaki , Shinya Okuda , Kei Watanabe , Masayuki Kitamura , Satoshi Wakatsuki , Daisuke Ikeno , Junichi Wada , Hirotaka Ogihara
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Tokyo
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Main IPC: H01L27/115
- IPC: H01L27/115 ; H01L29/792 ; H01L21/768 ; H01L27/11582 ; H01L21/3065 ; H01L29/788

Abstract:
According to one embodiment, the stacked body includes a plurality of metal films, a plurality of silicon oxide films, and a plurality of intermediate films. The intermediate films are provided between the metal films and the silicon oxide films. The intermediate films contain silicon nitride. Nitrogen composition ratios of the intermediate films are higher on sides of interfaces between the intermediate films and the metal films than on sides of interfaces between the intermediate films and the silicon oxide films. Silicon composition ratios of the intermediate films are higher on sides of interfaces between the intermediate films and the silicon oxide films than on sides of interfaces between the intermediate films and the metal films.
Public/Granted literature
- US20170053869A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2017-02-23
Information query
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