公开(公告)号：US09905462B2

公开(公告)日：2018-02-27

申请号：US14985969

申请日：2015-12-31

Applicant: Toshiba Memory Corporation

Inventor： Atsuko Sakata ,  Takeshi Ishizaki ,  Shinya Okuda ,  Kei Watanabe ,  Masayuki Kitamura ,  Satoshi Wakatsuki ,  Daisuke Ikeno ,  Junichi Wada ,  Hirotaka Ogihara

IPC: H01L27/115 ,  H01L29/792 ,  H01L21/768 ,  H01L27/11582 ,  H01L21/3065 ,  H01L29/788

CPC classification number: H01L21/76879 ,  H01L21/3065 ,  H01L21/76843 ,  H01L21/76864 ,  H01L27/11582 ,  H01L29/7881

Abstract: According to one embodiment, the stacked body includes a plurality of metal films, a plurality of silicon oxide films, and a plurality of intermediate films. The intermediate films are provided between the metal films and the silicon oxide films. The intermediate films contain silicon nitride. Nitrogen composition ratios of the intermediate films are higher on sides of interfaces between the intermediate films and the metal films than on sides of interfaces between the intermediate films and the silicon oxide films. Silicon composition ratios of the intermediate films are higher on sides of interfaces between the intermediate films and the silicon oxide films than on sides of interfaces between the intermediate films and the metal films.

公开(公告)号：US10943852B2

公开(公告)日：2021-03-09

申请号：US16286276

申请日：2019-02-26

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Ippei Kume ,  Taketo Matsuda ,  Shinya Okuda ,  Masahiko Murano

IPC: H01L23/48 ,  H01L23/532 ,  H01L23/00 ,  H01L21/768

Abstract: According to some embodiments, a semiconductor device includes a semiconductor substrate, a metal portion, a first insulating film, and a second insulating film. The semiconductor substrate has a through-hole extending from a first surface of the semiconductor substrate to a second surface thereof opposite to the first surface. The metal portion is formed in the through-hole. The first insulating film is provided on the second surface of the semiconductor substrate and on a side surface of the through-hole. The second insulating film has a dielectric constant of not more than 6.5 and is provided on a metal portion-side surface of the first insulating film on the side surface of the through-hole of the semiconductor substrate.

公开(公告)号：US10153227B2

公开(公告)日：2018-12-11

申请号：US15694994

申请日：2017-09-04

Applicant: Toshiba Memory Corporation

Inventor： Ippei Kume ,  Taketo Matsuda ,  Shinya Okuda ,  Masahiko Murano

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/532 ,  H01L21/768 ,  H01L21/02 ,  H01L23/528 ,  H01L23/00 ,  H01L21/3065 ,  H01L21/311

Abstract: A semiconductor device includes a semiconductor substrate having a first surface and a second surface opposite the first surface, a through via extending through the semiconductor substrate from the first surface to the second surface, a metal layer adjacent an inside surface of the through via, and an insulating film including OH bonds located between the semiconductor substrate and the metal layer, the insulating film having a thickness of 1 μm or less.